onsemi FQPF6N60C

Mosfet N-ch 600V 5.5A TO-220F
$ 0.777
Obsolete
Pagina del produttoreScheda dati

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Schede tecniche e documenti

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Datasheet10 pagine22 anni fa
Datasheet0 pagine0 anni fa

DigiKey

Fairchild Semiconductor

Farnell

iiiC

Cronologia dell'inventario

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Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-03-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-12-13
LTD Date2012-06-13

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Descrizioni

Descrizioni di onsemi FQPF6N60C fornite dai suoi distributori.

MOSFET N-CH 600V 5.5A TO-220F
Power Field-Effect Transistor, 5.5A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:5.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:40W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:5.5A; No. of Transistors:1; Package / Case:TO-220F; Power Dissipation Pd:40W; Power Dissipation Pd:40W; Pulse Current Idm:22A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
These N-Channel enhancement mode power field effect transistors are produced using Fairchild.s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

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