STMicroelectronics STP6NK60ZFP
$ 1.155
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Cronologia dell'inventario
Tendenza a 3 mesi: -100%
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 1 month ago)
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Descrizioni
Descrizioni di STMicroelectronics STP6NK60ZFP fornite dai suoi distributori.
N-channel 600 V - 1 Ohm - 6 A - TO-220 Zener-Protected SuperMESH(TM) Power MOSFET
STP6NK60ZFP N-CHANNEL MOSFET TRANSISTOR, 6 A, 600 V, 3-PIN TO-220FP
Trans MOSFET N-CH 600V 6A 3-Pin (3+Tab) TO-220FP Tube
Power MOSFET, N Channel, 600 V, 6 A, 1.2 ohm, TO-220FP, Through Hole
600 V-6 A-1 OHM TO-220FP N-CHANNEL ZENER-PROTECTED SUPERMESH POWER MOSFET Power Field-Effect Transistor, 6A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
STMicroelectronics NChannel EnhancedMOSTube MDmesh, SuperMESHseries, Vds=600 V, 6 A, TO-220FPencapsulation, Through hole mounting, 3Pin
MOSFET, N, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:32W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:6A; On State resistance @ Vgs = 10V:1.2ohm; Package / Case:TO-220FP; Power Dissipation Pd:32W; Power Dissipation Pd:32W; Pulse Current Idm:24A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
Alias del produttore
STMicroelectronics ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. STMicroelectronics può anche essere conosciuto con i seguenti nomi:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Cronologia dell'inventario
Tendenza a 3 mesi: -100%
Modelli CAD
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Specifiche tecniche
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight4.535924 g
Technical
Continuous Drain Current (ID)6 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance1.2 Ω
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time19 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance905 pF
Max Operating Temperature150 °C
Max Power Dissipation32 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Rds On Max1.2 Ω
Resistance1.2 Ω
Rise Time14 ns
Schedule B8541290080
Threshold Voltage3.75 V
Turn-Off Delay Time47 ns
Turn-On Delay Time14 ns
Dimensions
Height9.3 mm
Length10.4 mm
Width4.6 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant