onsemi FDPF5N60NZ

N-Channel Power MOSFET, UniFETTM II, 600V, 4.5A, 2Ω, TO-220F
$ 0.834
EOL
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Technical Drawing1 pagina5 anni fa

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onsemi

Fairchild Semiconductor

element14 APAC

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Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-11-11
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)

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Descrizioni

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N-Channel Power MOSFET, UniFETTM II, 600V, 4.5A, 2Ω, TO-220F
Trans MOSFET N-CH 600V 4.5A 3-Pin(3+Tab) TO-220FP Tube
600 V, 4.5 A, 2.0 OHM N-CHANNEL MOSFET Power Field-Effect Transistor, 4.5A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET,N CH,600V,4.5A,TO220F; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1.65ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:33W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (19-Dec-2011)
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

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