onsemi FQP22N30
$ 1.24
EOL
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Cronologia dell'inventario
Tendenza a 3 mesi: -71.43%
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Schede tecniche e documenti
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-06-12
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
Descrizioni
Descrizioni di onsemi FQP22N30 fornite dai suoi distributori.
Power MOSFET, N-Channel, QFET®, 300 V, 21 A, 160 mΩ, TO-220
Trans MOSFET N-CH 300V 21A 3-Pin(3+Tab) TO-220AB Rail
N-Channel 300 V 0.16 Ohm Through Hole Mosfet - TO-220
Power Field-Effect Transistor, 21A I(D), 300V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 300V, 21A, TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:300V; On Resistance Rds(on):160mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:21A; Package / Case:TO-220; Power Dissipation Pd:170W; Termination Type:Through Hole; Voltage Vds Typ:300V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -71.43%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
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Specifiche tecniche
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)21 A
Current Rating21 A
Drain to Source Breakdown Voltage300 V
Drain to Source Resistance160 mΩ
Drain to Source Voltage (Vdss)300 V
Element ConfigurationSingle
Fall Time100 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.2 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation170 W
Min Breakdown Voltage300 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Channels1
Number of Elements1
Power Dissipation170 W
Rds On Max160 mΩ
Resistance160 MΩ
Rise Time230 ns
Schedule B8541290080
Threshold Voltage5 V
Turn-Off Delay Time85 ns
Turn-On Delay Time35 ns
Voltage Rating (DC)300 V
Dimensions
Height20.4 mm
Length10.1 mm
Width4.7 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FQP22N30.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità