onsemi FQP14N30

N-Channel Power MOSFET, QFET®, 300 V, 14.4 A, 290 mΩ, TO-220
$ 0.907
EOL
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DistributorSKUMinPkg
Verical
2
FQP14N302110309
Rochester Electronics
2
FQP14N3074.517
23h
Flip ElectronicsFQP14N30220
6d
Component Stockers USAFQP14N302430
14h
Win Source
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WS-454880500035
1d

Schede tecniche e documenti

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IHS

Datasheet8 pagine12 anni fa
Datasheet0 pagine0 anni fa

onsemi

Fairchild Semiconductor

iiiC

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Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-06-12
Lifecycle StatusEOL (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)

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Descrizioni

Descrizioni di onsemi FQP14N30 fornite dai suoi distributori.

N-Channel Power MOSFET, QFET®, 300 V, 14.4 A, 290 mΩ, TO-220
onsemi
Single N-Channel 300 V 147 W 40 nC Silicon Through Hole Mosfet - TO-220-3
Future Electronics
Trans MOSFET N-CH 300V 14.4A 3-Pin(3+Tab) TO-220AB Rail
Avnet
Mosfet, N-Ch, 300V, 14.4A, 150Deg C/147W Rohs Compliant: Yes |Onsemi FQP14N30
Newark
Power Field-Effect Transistor, 14.4A I(D), 300V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IHS
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Fairchild Semiconductor

Immagini

TME
iiiC
Rochester Electronics

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