Infineon IRFB4229PBF
$ 1.624
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Cronologia dell'inventario
Tendenza a 3 mesi: -34.70%
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-09-10
Lifecycle StatusProduction (Last Updated: 5 months ago)
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InfineonIRFB38N20DPBF
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Descrizioni
Descrizioni di Infineon IRFB4229PBF fornite dai suoi distributori.
IRFB4229PBF N-channel MOSFET Transistor, 46 A, 250 V, 3-Pin TO-220AB
250V Single N-Channel HEXFET Power MOSFET PDP Switch in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Trans MOSFET N-CH 250V 46A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 250V 46A TO-220AB
Single N-Channel 250 V 46 mOhm 72 nC HEXFET® Power Mosfet - TO-220-3
Power MOSFET, N Channel, 250 V, 46 A, 0.038 ohm, TO-220AB, Through Hole
Infineon NChannelMOSTube, Vds=250 V, 46 A, TO-220ABencapsulation, Through hole mounting
Power Field-Effect Transistor, 46A I(D), 250V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 250V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:46A; Drain Source Voltage Vds:250V; On Resistance Rds(on):46mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:330W; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4229; Current Id Max:46A; N-channel Gate Charge:72nC; Package / Case:TO-220AB; Power Dissipation Pd:330W; Power Dissipation Pd:330mW; Pulse Current Idm:180A; Termination Type:Through Hole; Voltage Vds Typ:250V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: -34.70%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Specifiche tecniche
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)46 A
Drain to Source Breakdown Voltage250 V
Drain to Source Resistance46 mΩ
Drain to Source Voltage (Vds)250 V
Dual Supply Voltage250 V
Element ConfigurationSingle
Fall Time21 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance4.56 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation330 W
Min Breakdown Voltage250 V
Min Operating Temperature-40 °C
Nominal Vgs5 V
Number of Channels1
Number of Elements1
On-State Resistance46 mΩ
Package Quantity1000
Power Dissipation330 W
Rds On Max46 mΩ
Recovery Time290 ns
Resistance46 MΩ
Rise Time31 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage5 V
Turn-Off Delay Time30 ns
Turn-On Delay Time18 ns
Dimensions
Height19.15 mm
Length10.6426 mm
Width4.82 mm
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
Dichiarazioni di conformità