onsemi FQP12P20

P-Channel Power MOSFET, QFET®, -200 V, -11.5 A, 470 mΩ, TO-220

Trans MOSFET P-CH 200V 11.5A 3-Pin(3+Tab) TO-220AB Rail

200 V P-CHANNEL MOSFET Power Field-Effect Transistor, 11.5A I(D), 200V, 0.47ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

MOSFET, P, TO-220; Transistor Polarity: P Channel; Continuous Drain Current Id: 11.5A; Drain Source Voltage Vds: -200V; On Resistance Rds(on): 0.36ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -5V; Power Dissipation Pd: 120W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: Lead (27-Jun-2018); Current Id Max: -11.5A; Device Marking: FQP12P20; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 46A; Termination Type: Through Hole; Voltage Vds Typ: -200V; Voltage Vgs Max: -30V; Voltage Vgs Rds on Measurement: -10V

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.