onsemi FQP10N20C
$ 0.496
EOL
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Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Cronologia dell'inventario
Tendenza a 3 mesi: -0.01%
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Questo componente
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Price @ 1000
$ 0.496
$ 0.407
Stock
763,783
114,829
Authorized Distributors
2
2
Mount
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220
Drain to Source Voltage (Vdss)
200 V
200 V
Continuous Drain Current (ID)
9.5 A
9 A
Threshold Voltage
-
-
Rds On Max
360 mΩ
400 mΩ
Gate to Source Voltage (Vgs)
30 V
25 V
Power Dissipation
72 W
78 W
Input Capacitance
510 pF
550 pF
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-04-03
Lifecycle StatusEOL (Last Updated: 5 days ago)
LTB Date2022-06-23
LTD Date2022-12-23
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 5 days ago)
Parti correlate
InfineonIRF630NPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.3Ohm;ID 9.3A;TO-220AB;PD 82W;VGS +/-20V
InfineonIRFB38N20DPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.054Ohm;ID 43A;TO-220AB;PD 300W;VGS +/-30V
Descrizioni
Descrizioni di onsemi FQP10N20C fornite dai suoi distributori.
N-Channel Power MOSFET, QFET®, 200 V, 9.5 A, 360 mΩ, TO-220
Trans MOSFET N-CH 200V 9.5A 3-Pin(3+Tab) TO-220AB Rail
N-Channel 200 V 0.36 Ohm Through Hole Mosfet - TO-220
Power Field-Effect Transistor, 9.5A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -0.01%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)9.5 A
Current Rating9.5 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance360 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time72 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance510 pF
Max Operating Temperature150 °C
Max Power Dissipation72 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation72 W
Rds On Max360 mΩ
Resistance360 mΩ
Rise Time92 ns
Turn-Off Delay Time70 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)200 V
Dimensions
Height9.4 mm
Length10.1 mm
Width4.7 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità