onsemi FQP9P25
EOL
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-07-21
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
Descrizioni
Descrizioni di onsemi FQP9P25 fornite dai suoi distributori.
P-Channel 250 V 0.62 Ohm Through Hole Mosfet - TO-220-3
Trans MOSFET P-CH 250V 9.4A 3-Pin(3+Tab) TO-220AB Rail
P-Channel QFET® MOSFET -250V, -9.4A, 620mΩ
Power Field-Effect Transistor, 9.4A I(D), 250V, 0.62ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, P-CH, -250V, -9.4A, TO-220-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -9.4A; Drain Source Voltage Vds: -250V; On Resistance Rds(on): 0.48ohm; Rds(on) Test Vo; Available until stocks are exhausted
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Specifiche tecniche
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)9.4 A
Current Rating-9.4 A
Drain to Source Breakdown Voltage-250 V
Drain to Source Resistance620 mΩ
Drain to Source Voltage (Vdss)-250 V
Element ConfigurationSingle
Fall Time65 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.18 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation120 W
Min Breakdown Voltage250 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation120 W
Rds On Max620 mΩ
Resistance620 mΩ
Rise Time150 ns
Schedule B8541290080
Turn-Off Delay Time45 ns
Turn-On Delay Time20 ns
Voltage Rating (DC)-250 V
Dimensions
Height20.4 mm
Length10.67 mm
Width4.7 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità