onsemi FQB55N10TM

N-Channel Power MOSFET, QFET®, 100 V, 55 A, 26 mΩ, D2PAK
$ 1.07
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Newark
2
FQB55N10TM761Cut Tape
Arrow ElectronicsFQB55N10TM1661
VericalFQB55N10TM1666
Rochester ElectronicsFQB55N10TM5
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FQB55N10TMCT-ND8591Cut Tape

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi FQB55N10TM.

IHS

Datasheet8 pagine12 anni fa

Master Electronics

onsemi

element14 APAC

Arrow Electronics

Cronologia dell'inventario

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Parti alternative

Questo componente
Parti alternative
onsemiFQB55N10TM
onsemiFQB55N10
Price @ 1000
$ 1.07
$ 1.38
Stock
160,426
34,689
Authorized Distributors
6
3
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
TO-263
Drain to Source Voltage (Vdss)
100 V
100 V
Continuous Drain Current (ID)
55 A
55 A
Threshold Voltage
4 V
4 V
Rds On Max
26 mΩ
-
Gate to Source Voltage (Vgs)
25 V
-
Power Dissipation
3.75 W
155 W
Input Capacitance
2.73 nF
-

Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-10-19
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descrizioni

Descrizioni di onsemi FQB55N10TM fornite dai suoi distributori.

N-Channel Power MOSFET, QFET®, 100 V, 55 A, 26 mΩ, D2PAK
onsemi
Trans MOSFET N-CH 100V 55A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 100V 55A D2PAK
Win Source
Power MOSFET, N Channel, 100 V, 55 A, 0.026 ohm, TO-263AB, Surface Mount
Avnet
Power Field-Effect Transistor, 55A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Semicontronic
MOSFET, N CH, 100V, 55A, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.021ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:155W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
Farnell
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Fairchild Semiconductor

Immagini

Farnell
TME
RS
element14 APAC
Future Electronics
Component Sense
Farnell
Rochester Electronics
iiiC

Alias del produttore

onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • FQB55N10TM.