Infineon IRF3710STRLPBF

Mosfet, Power; N-ch; Vdss 100V; Rds(on) 23MILLIOHMS; Id 57A; D2PAK; Pd 200W; Vgs +/-20
$ 1.03
Production
Pagina del produttoreScheda dati

Prezzo e stock

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DistributorSKUMinPkg
AvnetIRF3710STRLPBF800800
2d
Newark
2
IRF3710STRLPBF6551Cut Tape
Arrow ElectronicsIRF3710STRLPBF2981
Future Electronics
2
IRF3710STRLPBF42.400800Tape & Reel
Rochester Electronics
2
IRF3710STRLPBF16.663
22h

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IRF3710STRLPBF.

IHS

Datasheet11 pagine12 anni fa
Datasheet10 pagine12 anni fa

Newark

DigiKey

iiiC

RS (Formerly Allied Electronics)

Cronologia dell'inventario

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Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-03-11
Lifecycle StatusProduction (Last Updated: 4 months ago)

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MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 23Milliohms;ID 57A;D2Pak;PD 200W;VGS +/-20
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Descrizioni

Descrizioni di Infineon IRF3710STRLPBF fornite dai suoi distributori.

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 23Milliohms;ID 57A;D2Pak;PD 200W;VGS +/-20
RS (Formerly Allied Electronics)
Single N-Channel 100V 23 mOhm 130 nC HEXFET® Power Mosfet - D2PAK
Future Electronics
Power MOSFET, N Channel, 100 V, 57 A, 0.023 ohm, TO-263 (D2PAK), Surface Mount
Avnet
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 100V 57A 3-Pin(2+Tab) D2PAK T/R
Verical
Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Semicontronic
MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:57A; Drain Source Voltage Vds:100V; On Resistance Rds(on):23mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:200W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:57A; Package / Case:D2-PAK; Power Dissipation Pd:200W; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
element14 APAC
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.
Infineon
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 57 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 23 / Gate-Source Voltage V = 20 / Fall Time ns = 47 / Rise Time ns = 58 / Turn-OFF Delay Time ns = 45 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 200
Distrelec

Immagini

Infineon
Newark
South Microelectronics
TME
element14 APAC
Micros
Conrad
Future Electronics
Distrelec
LCSC
Jameco
LZChips

Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IRF3710STRLPBF.
  • SP001553984