onsemi FQB11N40CTM
EOL
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Farnell | FQB11N40CTM | 0 | 1 | Cut Tape | 10h | |||||||
| Win Source | WS-FQB11N40CTM | 9770 | 90 | 11h | ||||||||
| Worldway Electronics | FQB11N40CTM | 27.641 | 7 | Tape & Reel | 10h | |||||||
| IC Components Ltd. | FQB11N40CTM | 5900 | 5d | |||||||||
| Aztech | FQB11N40CTM | 4925 | 5h |
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FQB11N40CTM.
Modelli CAD
Scarica il simbolo onsemi FQB11N40CTM, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 SnapEDA | Impronta | Scarica | |
 Ultra Librarian | SimboloImpronta | Scarica |
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.
Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 0.407
Stock
121,102
184,856
Authorized Distributors
1
2
Mount
Surface Mount
-
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
400 V
-
Continuous Drain Current (ID)
10.5 A
10 A
Threshold Voltage
-
-
Rds On Max
530 mΩ
-
Gate to Source Voltage (Vgs)
30 V
30 V
Power Dissipation
135 W
3.13 W
Input Capacitance
1.09 nF
-
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-01-30
Lifecycle StatusEOL (Last Updated: 18 hours ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 18 hours ago)
Parti correlate
onsemiFQB11N40TM
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 11.4A Tc 11.4A 3.13W 60ns
STMicroelectronicsSTB11NK40ZT4
N-Channel 400V - 0.49 Ohm - 9A - D2PAK Zener-Protected SuperMESH(TM) POWER MOSFET
VishayIRFS11N50APBF
Power MOSFET, N Channel, 500 V, 11 A, 0.52 ohm, TO-263 (D2PAK), Surface Mount
STMicroelectronicsSTB11NK50ZT4
Power MOSFET, N Channel, 500 V, 4.5 A, 0.48 ohm, TO-263 (D2PAK), Surface Mount
Descrizioni
Descrizioni di onsemi FQB11N40CTM fornite dai suoi distributori.
N-Channel Power MOSFET, QFET®, 400 V, 10.5 A, 530 mΩ, D2PAK
Trans MOSFET N-CH 400V 10.5A 3-Pin(2+Tab) D2PAK T/R
N-Channel 400 V 0.5 Ohm Surface Mount Mosfet - D2PAK-3
Power Field-Effect Transistor, 10.5A I(D), 400V, 0.53ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for highefficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Specifiche tecniche
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)10.5 A
Current Rating10.5 A
Drain to Source Breakdown Voltage400 V
Drain to Source Resistance530 mΩ
Drain to Source Voltage (Vdss)400 V
Element ConfigurationSingle
Fall Time81 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.09 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation135 W
Min Breakdown Voltage400 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation135 W
Rds On Max530 mΩ
Rise Time89 ns
Schedule B8541290080
Turn-Off Delay Time81 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)400 V
Dimensions
Height5.08 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FQB11N40CTM.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità