STMicroelectronics STB11NK40ZT4
$ 1.091
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Schede tecniche e documenti
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 4 months ago)
Parti correlate
STMicroelectronicsSTB11NK50ZT4
Power MOSFET, N Channel, 500 V, 4.5 A, 0.48 ohm, TO-263 (D2PAK), Surface Mount
STMicroelectronicsSTB9NK50ZT4
STB9NK50ZT4 N-CHANNEL MOSFET TRANSISTOR, 7.2 A, 500 V, 3-PIN D2PAK
onsemiFQB11N40TM
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 11.4A Tc 11.4A 3.13W 60ns
Descrizioni
Descrizioni di STMicroelectronics STB11NK40ZT4 fornite dai suoi distributori.
N-Channel 400V - 0.49 Ohm - 9A - D2PAK Zener-Protected SuperMESH(TM) POWER MOSFET
Power MOSFET, N Channel, 400 V, 4.5 A, 0.49 ohm, TO-263 (D2PAK), Surface Mount
Trans MOSFET N-CH 400V 9A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 400V 9A D2PAK
N-channel 400 V, 0.49 Ohm typ., 9 A SuperMESH Power MOSFET in D2PAK package
Ciiva
STB11NK40ZT4 N-channel MOSFET Transistor, 9 A, 400 V, 2+Tab-Pin TO-263
N-Channel 400 V 49 mO 110 W SMT Zener Protected SupeMesh MosFet - D2PAK
MOSFET, N CH, 400V, 9A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Source Voltage Vds:400V; On Resistance
N-CHANNEL 400 V, 0.49 OHM, 9 A D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFET Power Field-Effect Transistor, 9A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Mosfet, N Channel, 400V, 9A, D2Pak; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:4.5A; Tensión Drenaje-Fuente Vds:400V; Resistencia De Activación Rds(On):490Mohm; Tensión Vgs De Medición Rds(On):10V |Stmicroelectronics STB11NK40ZT4
MOSFET, N CH, 400V, 9A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.5A; Drain Source Voltage Vds: 400V; On Resistance Rds(on): 0.49ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 110W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 10A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 400V; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V
Alias del produttore
STMicroelectronics ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. STMicroelectronics può anche essere conosciuto con i seguenti nomi:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Cronologia dell'inventario
Tendenza a 3 mesi: +33.65%
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Specifiche tecniche
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)9 A
Current Rating9 A
Drain to Source Breakdown Voltage400 V
Drain to Source Resistance550 mΩ
Drain to Source Voltage (Vdss)400 V
Element ConfigurationSingle
Fall Time18 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance930 pF
Max Operating Temperature150 °C
Max Power Dissipation110 W
Min Breakdown Voltage400 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation110 W
Rds On Max550 mΩ
Resistance550 mΩ
Rise Time20 ns
Schedule B8541290080
Threshold Voltage3.75 V
Turn-Off Delay Time40 ns
Turn-On Delay Time20 ns
Voltage Rating (DC)400 V
Dimensions
Height4.6 mm
Length10.75 mm
Width10.4 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per STMicroelectronics STB11NK40ZT4.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant