onsemi FQA8N100C
$ 2.594
Production
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Cronologia dell'inventario
Tendenza a 3 mesi: +2.74%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2005-09-15
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
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Descrizioni
Descrizioni di onsemi FQA8N100C fornite dai suoi distributori.
N-Channel Power MOSFET, QFET®, 1000 V, 8.0 A, 1.45 Ω, TO-3P
MOSFET, N CH, 1KV, 8A, TO-3PN-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 8A; Drain Source Voltage Vds: 1kV; On Resistance Rds(on): 1.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Di
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +2.74%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.401 g
Technical
Continuous Drain Current (ID)8 A
Current Rating8 A
Drain to Source Breakdown Voltage1 kV
Drain to Source Resistance1.45 Ω
Drain to Source Voltage (Vdss)1 kV
Element ConfigurationSingle
Fall Time80 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance3.22 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation225 W
Min Breakdown Voltage1 kV
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation225 W
Rds On Max1.45 Ω
Resistance1.45 Ω
Rise Time95 ns
Schedule B8541290080
Threshold Voltage5 V
Turn-Off Delay Time122 ns
Turn-On Delay Time50 ns
Voltage Rating (DC)1 kV
Dimensions
Height23.8 mm
Length15.8 mm
Width5 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità