onsemi FQA9N90C_F109
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Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FQA9N90C_F109.
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-03-10
Parti correlate
STMicroelectronicsSTP9NK70ZFP
N-Channel 700V - 1Ohm - 7.5A - TO-220FP Zener-Protected SuperMesh(TM) POWER MOSFET
Descrizioni
Descrizioni di onsemi FQA9N90C_F109 fornite dai suoi distributori.
MOSFET Transistor, N Channel, 9 A, 900 V, 1.12 ohm, 10 V, 5 V
N-Channel QFET® MOSFET 900V, 9.0A, 1.4Ω
MOSFET N-CH 900V 9A TO-3P / Trans MOSFET N-CH 900V 9A 3-Pin(3+Tab) TO-3P Tube
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Specifiche tecniche
Physical
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.401 g
Technical
Continuous Drain Current (ID)9 A
Drain to Source Breakdown Voltage900 V
Drain to Source Resistance1.4 Ω
Drain to Source Voltage (Vdss)900 V
Element ConfigurationSingle
Fall Time75 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.73 nF
Max Operating Temperature150 °C
Max Power Dissipation280 W
Min Breakdown Voltage900 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation280 W
Rds On Max1.4 Ω
Rise Time120 ns
Schedule B8541290080
Threshold Voltage5 V
Turn-Off Delay Time100 ns
Turn-On Delay Time50 ns
Dimensions
Height18.9 mm
Length15.8 mm
Width5 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FQA9N90C_F109.