onsemi FQA65N20

N-Channel Power MOSFET, QFET®, 200 V, 65 A, 32 mΩ, TO-3P
$ 3.229
EOL
Pagina del produttoreScheda dati

Prezzo e stock

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi FQA65N20.

IHS

Datasheet8 pagine12 anni fa
Datasheet0 pagine0 anni fa

onsemi

Fairchild Semiconductor

Farnell

Factory Futures

Cronologia dell'inventario

Trend di 3 mesi:
+0.00%

Modelli CAD

Scarica il simbolo onsemi FQA65N20, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.

FONTEeCADmCADFILE
Ultra Librarian
SimboloImpronta
Scarica
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.

Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-06-02
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)

Parti correlate

InfineonIRFB4227PBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 19.7 Milliohms;ID 65A;TO-220AB;PD 330W
InfineonIRFP4227PBF
MOSFET Operating temperature: -40...175 °C Housing type: TO-247 Power dissipation: 330 W
InfineonIRFSL4227PBF
IRFSL4227PBF N-channel MOSFET Transistor, 62 A, 200 V, 3-Pin TO-262
onsemiFQA55N25
N-Channel Power MOSFET, QFET®, 250 V, 55 A, 40 mΩ, TO-3P
onsemiFDA70N20
N-Channel Power MOSFET, UniFETTM, 200V, 70A, 35mΩ, TO-3P
onsemiFDP61N20
N-Channel Power MOSFET, UniFETTM, 200V, 61A, 41mΩ, TO-220

Descrizioni

Descrizioni di onsemi FQA65N20 fornite dai suoi distributori.

N-Channel Power MOSFET, QFET®, 200 V, 65 A, 32 mΩ, TO-3P
MOSFET N-CH 200V 65A TO-3P / Trans MOSFET N-CH 200V 65A 3-Pin(3+Tab) TO-3P Tube
N-Channel 200 V 32 mO 200 nC Flange Mount QFET Mosfet - TO-3PN
MOSFET, N, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:200V; On Resistance Rds(on):32mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:310W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-3P; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:65A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:TO-3P; Power Dissipation Pd:310W; Power Dissipation Pd:310W; Pulse Current Idm:260A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
MOSFET, N, TO-3P; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:65A; Resistance, Rds On:0.032ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-3P; Termination ;RoHS Compliant: Yes
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Alias del produttore

onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • FQA65N20.