Infineon IRFSL4227PBF
$ 7.48
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-09-27
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2017-10-12
LTD Date2018-04-12
Parti correlate
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200V Single N-Channel HEXFET Power MOSFET Switch in a TO-262 package, TO262-3, RoHS
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Descrizioni
Descrizioni di Infineon IRFSL4227PBF fornite dai suoi distributori.
IRFSL4227PBF N-channel MOSFET Transistor, 62 A, 200 V, 3-Pin TO-262
200V Single N-Channel HEXFET Power MOSFET PDP Switch in a TO-262 package, TO262-3, RoHS
Infineon SCT
PDP SWITCH Power Field-Effect Transistor, 62A I(D), 200V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
MOSFET, N-CH, 200V, 62A, TO-262-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 62A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.022ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Po
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageTO-262
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)62 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance26 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time31 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance4.6 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation330 W
Min Breakdown Voltage200 V
Min Operating Temperature-40 °C
Nominal Vgs5 V
Number of Elements1
On-State Resistance26 mΩ
Package Quantity1000
Power Dissipation330 W
Rds On Max26 mΩ
Rise Time20 ns
Threshold Voltage5 V
Turn-Off Delay Time21 ns
Turn-On Delay Time33 ns
Dimensions
Height9.65 mm
Length10.67 mm
Width4.83 mm
Conformità
Classificazione ambientale
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità