onsemi FQA36P15
$ 4.09
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Cronologia dell'inventario
Tendenza a 3 mesi: -1.98%
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-10-02
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
InfineonIRFB41N15DPBF
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.045Ohm;ID 41A;TO-220AB;PD 200W;VGS +/-30V
InfineonIRFIB41N15DPBF
150V Single N-Channel HEXFET Power MOSFET in a TO-220 Full-Pak(Iso), FULLPAK220-3, RoHS
Descrizioni
Descrizioni di onsemi FQA36P15 fornite dai suoi distributori.
P-Channel Power MOSFET, QFET®, -150 V, -36 A, 90 mΩ, TO-3P
FQA36P15 Series 150 V 0.090 Ohm Through Hole N-Channel Mosfet - TO-3PN
MOSFET, P, TO-3P; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-150V; Current, Id Cont:-36A; Resistance, Rds On:0.09ohm; Voltage, Vgs Rds on Measurement:-10V; Voltage, Vgs th Typ:-4V; Case Style:TO-3P; Termination Type:Through Hole
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -1.98%
Modelli CAD
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Specifiche tecniche
Physical
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.401 g
Technical
Continuous Drain Current (ID)36 A
Current Rating-36 A
Drain to Source Breakdown Voltage-150 V
Drain to Source Resistance90 mΩ
Drain to Source Voltage (Vdss)-150 V
Element ConfigurationSingle
Fall Time150 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance3.32 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation294 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation294 W
Rds On Max90 mΩ
Resistance90 mΩ
Rise Time350 ns
Schedule B8541290080
Threshold Voltage-4 V
Turn-Off Delay Time155 ns
Turn-On Delay Time50 ns
Voltage Rating (DC)-150 V
Dimensions
Height23.8 mm
Length15.8 mm
Width5 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità