onsemi FGH50N6S2D

FGH50N6S2D Series 600 V 75 A SMT 600V SMPS II Series N-Channel IGBT - TO-247

Trans IGBT Chip N-CH 600V 75A 463000mW 3-Pin(3+Tab) TO-247 Rail

Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247

COMP,600V,SMPS II SERIES SIZE 5 N-CHANNEL IGBT W/DIODE

463W 1.9V withbuilt-indiode 600V 75A TO-247-3 15.87mm*4.82mm*20.82mm

Ptpigbt To247 600V Smps2 Rohs Compliant: Yes

INSULATED GATE BIPOLAR TRANSISTO

IGBT, N, TO-247; Transistor Type:IGBT; DC Collector Current:75A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:463W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Alternate Case Style:SOT-249; Current Ic Continuous a Max:75A; Current Temperature:25°C; Fall Time Typ:50ns; Fall Time tf:50ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:463W; Power Dissipation Pd:463W; Power Dissipation Pd:463W; Pulsed Current Icm:240A; Rise Time:15ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

The FGH50N6S2D is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially designed for: Power Factor Correction (PFC) circuits Full bridge topologies Half bridge topologies Push-Pull circuits Uninterruptible power supplies Zero voltage and zero current switching circuits IGBT formerly Developmental Type TA49344 Diode formerly Developmental Type TA49392 Product Highlights: 100kHz Operation at 390V, 40A 200kHZ Operation at 390V, 25A 600V Switching SOA Capability Typical Fall Time. . . . . . 90ns at TJ = 125C Low Gate Charge. . . . . . 70nC at VGE = 15V Low Plateau Voltage. . . . . . 6.5V Typical UIS Rated. . . . . . 480mJ Low Conduction Loss