onsemi FDU3N40TU
$ 0.333
EOL
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Cronologia dell'inventario
Tendenza a 3 mesi: -0.51%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FDU3N40TU.
Modelli CAD
Scarica il simbolo onsemi FDU3N40TU, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 Component Search Engine | SimboloImpronta | 3D | Scarica |
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.
Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 0.333
$ 0.263
Stock
343,145
134,301
Authorized Distributors
4
2
Mount
Through Hole
Through Hole
Case/Package
TO-251-3
TO-251-3
Drain to Source Voltage (Vdss)
400 V
400 V
Continuous Drain Current (ID)
2 A
2.1 A
Threshold Voltage
-
-
Rds On Max
3.4 Ω
3.4 Ω
Gate to Source Voltage (Vgs)
30 V
-
Power Dissipation
30 W
-
Input Capacitance
225 pF
140 pF
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2007-02-26
Lifecycle StatusEOL (Last Updated: 10 hours ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 10 hours ago)
Parti correlate
STMicroelectronicsSTD3NK50Z-1
STMICROELECTRONICS STD3NK50Z-1 MOSFET Transistor, N Channel, 1.15 A, 500 V, 2.8 ohm, 10 V, 3.75 V
onsemiNDD03N40Z-1G
Tube Through Hole N-Channel MOSFET (Metal Oxide) Mosfet Transistor 2.1A Tc 2.1A 37W Tc 400V
Descrizioni
Descrizioni di onsemi FDU3N40TU fornite dai suoi distributori.
N-Channel Power MOSFET, UniFETTM, 400V, 2A, 3.4Ω, IPAK
N-Channel 400 V 2 A 3400 mOhm Mosfet - IPAK
MOSFET, N-CH, 400V, 2A, 150DEG C, 30W; Available until stocks are exhausted Alternative available
Trans MOSFET N-CH 400V 2A 3-Pin(3+Tab) IPAK Rail
Avnet Japan
Power Field-Effect Transistor, 2A I(D), 400V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Uf 400V 3.4Ohm Ipak Rohs Compliant: Yes
场效应管, MOSFET, N沟道, 400V, 2A, 150度 C, 30W;
POWER FIELD-EFFECT TRANSISTOR, 2
onsemi NChannel EnhancedMOSTube UniFETseries, Vds=400 V, 2 A, IPAK (TO-251)encapsulation, Through hole mounting, 3Pin
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -0.51%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight343.08 mg
Technical
Continuous Drain Current (ID)2 A
Drain to Source Breakdown Voltage400 V
Drain to Source Resistance3.4 Ω
Drain to Source Voltage (Vdss)400 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance225 pF
Max Operating Temperature150 °C
Max Power Dissipation30 W
Min Breakdown Voltage400 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
Power Dissipation30 W
Rds On Max3.4 Ω
Resistance3.4 Ω
Rise Time30 ns
Schedule B8541290080
Turn-Off Delay Time10 ns
Turn-On Delay Time10 ns
Dimensions
Height7.57 mm
Length6.8 mm
Width2.5 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FDU3N40TU.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità