onsemi FDT457N

N-Channel Enhancement Mode Field Effect Transistor 30V, 5A, 60mΩ
$ 0.339
Production
Pagina del produttoreScheda dati

Prezzo e stock

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DistributorSKUMinPkg
AvnetFDT457N80004K
6d
Rochester ElectronicsFDT457N99
1d
DigiKey
3
FDT457NCT-ND9011Cut Tape
Newark
2
FDT457N04KTape & Reel
Onlinecomponents.comFDT457N0100Bulk

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi FDT457N.

IHS

Datasheet6 pagine3 anni fa
Datasheet5 pagine0 anni fa

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onsemi

Farnell

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Parti alternative

Questo componente
Parti alternative
onsemiFDT457N
STMicroelectronicsSTN4NF03L
Price @ 1000
$ 0.339
$ 0.327
Stock
369,608
2,589,553
Authorized Distributors
6
6
Mount
Surface Mount
Surface Mount
Case/Package
SOT-223
SOT-223
Drain to Source Voltage (Vdss)
850 mV
30 V
Continuous Drain Current (ID)
5 A
6.5 A
Threshold Voltage
1.6 V
1 V
Rds On Max
60 mΩ
50 mΩ
Gate to Source Voltage (Vgs)
20 V
16 V
Power Dissipation
3 W
3.3 W
Input Capacitance
235 pF
330 pF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1998-08-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

Parti correlate

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P-Channel Enhancement Mode Field Effect Transistor -30V, -5.9A, 50mΩ
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onsemiFDT459N
N-Channel Enhancement Mode Field Effect Transistor 30V, 6.5A, 35mΩ
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STMicroelectronicsSTN4NF03L
N-Channel 30V - 0.039 Ohm - 4A - SOT-223 STripFET(TM) POWER MOSFET
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InfineonIRLL2703TRPBF
Single N-Channel 30 V 0.06 Ohm 9.3 nC HEXFET® Power Mosfet - SOT-223
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Diodes Inc.DMN3032LE-13
N-Channel 30 V 29 mOhm Surface Mount Enhancement Mode Mosfet - SOT-223
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Descrizioni

Descrizioni di onsemi FDT457N fornite dai suoi distributori.

N-Channel Enhancement Mode Field Effect Transistor 30V, 5A, 60mΩ
onsemi
3W(Ta) 20V 3V@ 250¦ÌA 5.9nC@ 5 V 1N 30V 60m¦¸@ 5A,10V 5A 235pF@15V SOT-223-4 6.5mm*3.5mm*1.8mm
UnikeyIC
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Power Field-Effect Transistor, 5A I(D), 30V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
ComSIT Distribution GmbH
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:5A; On Resistance, Rds(on):60mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SOT-223 ;RoHS Compliant: Yes
Newark
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance. These products are well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor control.
Fairchild Semiconductor

Immagini

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RS
iiiC
Augswan
Farnell
Farnell
element14 APAC
TME
Future Electronics
LZChips
Rochester Electronics

Alias del produttore

onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • FDT457N.