onsemi NDT454P

P-Channel Enhancement Mode Field Effect Transistor -30V, -5.9A, 50mΩ
Obsolete
Pagina del produttoreScheda dati

Prezzo e stock

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi NDT454P.

Newark

Datasheet8 pagine4 anni fa
Datasheet0 pagine0 anni fa
Datasheet0 pagine0 anni fa
Datasheet0 pagine0 anni fa

Upverter

element14 APAC

IHS

onsemi

Modelli CAD

Scarica il simbolo onsemi NDT454P, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.

FONTEeCADmCADFILE
Component Search Engine
SimboloImpronta
3DScarica
EE Concierge
SimboloImpronta
SnapEDA
Impronta
Scarica
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.

Supply Chain

Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1996-06-01
Lifecycle StatusObsolete (Last Updated: 6 days ago)
LTB Date2022-01-31
LTD Date2023-01-31
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 6 days ago)

Parti correlate

onsemiNDT451AN
N-Channel Enhancement Mode Field Effect Transistor 30V, 7.2A, 35mΩ
Diodes Inc.ZXMP3A16GTA
P-Channel 30 V 0.045 Ohm Enhancement Mode MOSFET - SOT-223
onsemiFDT459N
N-Channel Enhancement Mode Field Effect Transistor 30V, 6.5A, 35mΩ
onsemiNDT452AP
P-Channel Enhancement Mode Field Effect Transistor -30V, -5A, 65mΩ
STMicroelectronicsSTN4NF03L
N-Channel 30V - 0.039 Ohm - 4A - SOT-223 STripFET(TM) POWER MOSFET
InfineonIRLL3303PBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.031Ohm;ID 4.6A;SOT-223;PD 1W;VGS +/-16V

Descrizioni

Descrizioni di onsemi NDT454P fornite dai suoi distributori.

P-Channel Enhancement Mode Field Effect Transistor -30V, -5.9A, 50mΩ
P-Channel 30 V 0.05 Ohm SMT Enhancement Mode Field Effect Transistor- SOT-223
Trans MOSFET P-CH 30V 5.9A 4-Pin (3+Tab) SOT-223 T/R
MOSFET, P, SMD, SOT-223; Transistor Polarity:P Channel; Continuous Drain Current Id:-5.9A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):50mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-2.7V; Power Dissipation Pd:3W; Transistor Case Style:SOT-223; No. of Pins:4; SVHC:No SVHC (19-Dec-2011); Current Id Max:-5.9A; Package / Case:SOT-223; Power Dissipation Pd:3W; Termination Type:SMD; Voltage Vds Typ:-30V; Voltage Vgs Max:-2.7V; Voltage Vgs Rds on Measurement:-10V
Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Alias del produttore

onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • NDT454P.
  • NDT454P..