onsemi FDS8984
$ 0.247
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Cronologia dell'inventario
Tendenza a 3 mesi: -47.00%
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Price @ 1000
$ 0.247
$ 0.335
Stock
821,914
746,584
Authorized Distributors
6
6
Mount
Surface Mount
Surface Mount
Case/Package
SOIC
SOP
Drain to Source Voltage (Vdss)
30 V
30 V
Continuous Drain Current (ID)
7 A
6.9 A
Threshold Voltage
1.7 V
-
Rds On Max
23 mΩ
20 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
1.6 W
2 W
Input Capacitance
635 pF
725 pF
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-02-28
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
InfineonBSO119N03S
1.56W(Ta) 20V 2V@ 25¦ÌA 13nC@ 5 V 1N 30V 11.9m¦¸@ 11A,10V 9A 1.73nF@15V SOP 4.9mm*3.9mm*1.75mm
Descrizioni
Descrizioni di onsemi FDS8984 fornite dai suoi distributori.
Transistor MOSFET Array Dual N-CH 30V 7A 8-Pin SOIC T/R
Avnet Japan
N-Channel 30 V 23 mOhm SMT PowerTrench Mosfet - SOIC-8
N-Channel PowerTrench® MOSFET 30V, 7A, 23mΩ
MOSFET 2N-Channel VDS=30V ID=7A RDS(on)=23mΩ SOIC8_150MIL
Power Field-Effect Transistor, 7A I(D), 30V, 0.023ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -47.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight187 mg
Technical
Continuous Drain Current (ID)7 A
Current Rating7 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance23 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationDual
Fall Time9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance635 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.6 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.7 V
Number of Channels2
Number of Elements2
PackagingCut Tape
Power Dissipation1.6 W
Rds On Max23 mΩ
Resistance23 MΩ
Rise Time9 ns
Schedule B8541290080
Threshold Voltage1.7 V
Turn-Off Delay Time42 ns
Turn-On Delay Time5 ns
Voltage Rating (DC)30 V
Dimensions
Height1.75 mm
Length5 mm
Width4 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità