Vishay SI4346DY-T1-E3
$ 0.49
Obsolete
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Distributori autorizzati
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | SI4346DY-T1-E3CT-ND | 198 | 1 | Cut Tape | ||||||||
| Farnell | SI4346DY-T1-E3 | 0 | 5 | Cut Tape | 4h | |||||||
| Win Source | WS-SI4346DY-T1-E3 | 5000 | 65 | 4h | ||||||||
| Esaler Electronic | SI4346DY-T1-E3 | 1 | 1d | |||||||||
| UnikeyIC | SI4346DY-T1-E3 | 198 | 22 | Tape & Reel | 5h |
Cronologia dell'inventario
Tendenza a 3 mesi: -100%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-04-29
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Descrizioni
Descrizioni di Vishay SI4346DY-T1-E3 fornite dai suoi distributori.
Single N-Channel 30 V 0.023 Ohms Surface Mount Power Mosfet - SOIC-8
Trans MOSFET N-CH 30V 5.9A 8-Pin SOIC N T/R
N-CHANNEL 30-V (D-S) MOSFET Small Signal Field-Effect Transistor, 5.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET,N CH,30V,5.9A,8-SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):19mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.31W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; Current Id Max:5.9A; Power Dissipation Pd:1.31W; Voltage Vgs Max:12V
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5.9A; On Resistance Rds(On):0.019Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Product Range:-Rohs Compliant: No
Alias del produttore
Vishay ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Vishay può anche essere conosciuto con i seguenti nomi:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Cronologia dell'inventario
Tendenza a 3 mesi: -100%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight186.993455 mg
Technical
Continuous Drain Current (ID)5.9 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance23 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time11 ns
Gate to Source Voltage (Vgs)12 V
Max Operating Temperature150 °C
Max Power Dissipation1.31 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
Power Dissipation1.31 W
Rds On Max23 mΩ
Resistance23 mΩ
Rise Time11 ns
Threshold Voltage2 V
Turn-Off Delay Time40 ns
Turn-On Delay Time9 ns
Dimensions
Height1.55 mm
Length5 mm
Width4 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità