onsemi FDS8958B
$ 0.319
EOL
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Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2008-12-12
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2024-06-22
LTD Date2024-12-22
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
Descrizioni
Descrizioni di onsemi FDS8958B fornite dai suoi distributori.
Dual N & P-Channel 30 V 26 mO Surface Mount PowerTrench Mosfet - SOIC-8
Trans MOSFET N/P-CH 30V 6.4A/4.5A 8-Pin SOIC N T/R
Power Field-Effect Transistor, 6.4A I(D), 30V, 0.026ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
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Specifiche tecniche
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight187 mg
Technical
Continuous Drain Current (ID)6.4 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance26 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time6 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance540 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Power Dissipation2 W
Rds On Max26 mΩ
Resistance26 MΩ
Rise Time6 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time17 ns
Dimensions
Height1.75 mm
Length4.9 mm
Width3.9 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità