Infineon IRF7303TRPBF
$ 0.297
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Cronologia dell'inventario
Tendenza a 3 mesi: +52.03%
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Country of OriginMainland China, Philippines, Thailand, USA
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1995-07-01
Lifecycle StatusProduction (Last Updated: 3 months ago)
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Descrizioni
Descrizioni di Infineon IRF7303TRPBF fornite dai suoi distributori.
Transistor MOSFET Negative Channel 30 Volt 4.9A 8-Pin SOIC T/R
MOSFET, Power;Dual N-Ch;VDSS 30V;RDS(ON) 0.05Ohm;ID 4.9A;SO-8;PD 2W;VGS +/-20V
Infineon Technologies N channel dual HEXFET power MOSFET, 30 V, 4.9 A, SO-8, IRF7303TRPBF
Dual N-Channel 30V 0.08 Ohm 25 nC HEXFET® Power Mosfet - SOIC-8
Power Field-Effect Transistor, 4.9A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.
Channel Type:Dual N Channel; Drain Source Voltage Vds N Channel:30V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:4.9A; Continuous Drain Current Id P Channel:-; No. Of Pins:8Pins; Product Range:- Rohs Compliant: Yes |Infineon IRF7303TRPBF.
MOSFET, NNCH, 30V, 4.9A, 8SOIC; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:4.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.05ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (18-Jun-2012)
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: +52.03%
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Specifiche tecniche
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)4.9 A
Current Rating4.9 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance50 mΩ
Drain to Source Voltage (Vds)30 V
Element ConfigurationDual
Fall Time7.7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance520 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Elements2
On-State Resistance50 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2 W
Rds On Max50 mΩ
Resistance50 mΩ
Rise Time21 ns
Schedule B8541290080
Threshold Voltage1 V
Turn-Off Delay Time22 ns
Turn-On Delay Time6.8 ns
Voltage Rating (DC)30 V
Dimensions
Height1.4986 mm
Length4.9784 mm
Width3.9878 mm
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
Dichiarazioni di conformità