onsemi FDS8949
$ 0.414
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Tendenza a 3 mesi: -100%
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Schede tecniche e documenti
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Scheda dati ufficiale4 anni fa
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-09-11
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
VishaySI4599DY-T1-GE3
SI4599DY-T1-GE3 DUAL N/P-CHANNEL MOSFET TRANSISTOR,4.7 A,6.8 A,40V,8-PIN SOIC
InfineonIRF9389TRPBF
Mosfet, N/P-Ch, 30V, 6.8A, Soic Rohs Compliant: Yes |Infineon Technologies IRF9389TRPBF
Descrizioni
Descrizioni di onsemi FDS8949 fornite dai suoi distributori.
Dual N-Channel PowerTrench® MOSFET, Logic Level, 40V, 6A, 29mΩ
onsemi NChannel EnhancedMOSTube, Vds=40 V, 6 A, SOICencapsulation, surface mount, 8Pin
ON SEMICONDUCTOR - FDS8949 - DUAL N CHANNEL MOSFET, 40V, SOIC, FULL REEL
40V, 6A, 29M OHM, DUAL N-CHANNEL LOGIC LEVEL POWERTRENCH MOSFET Power Field-Effect Transistor, 6A I(D), 40V, 0.043ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:6A; On Resistance, Rds(on):0.029ohm; Rds(on) Test Voltage, Vgs:1.9V; Threshold Voltage, Vgs Typ:20V ;RoHS Compliant: Yes
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Transistor Polarity = N-Channel / Configuration = Dual / Continuous Drain Current (Id) A = 6 / Drain-Source Voltage (Vds) V = 40 / ON Resistance (Rds(on)) mOhm = 36 / Gate-Source Voltage V = 20 / Fall Time ns = 6 / Rise Time ns = 10 / Turn-OFF Delay Time ns = 37 / Turn-ON Delay Time ns = 18 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOIC / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 900
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -100%
Modelli CAD
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Specifiche tecniche
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight187 mg
Technical
Continuous Drain Current (ID)6 A
Current Rating6 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance43 mΩ
Drain to Source Voltage (Vdss)40 V
Dual Supply Voltage40 V
Element ConfigurationDual
Fall Time3 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance955 pF
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Nominal Vgs1.9 V
Number of Elements2
PackagingCut Tape
Power Dissipation2 W
Rds On Max29 mΩ
Resistance29 mΩ
Rise Time5 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage1.9 V
Turn-Off Delay Time23 ns
Turn-On Delay Time9 ns
Voltage Rating (DC)40 V
Dimensions
Height1.5 mm
Length5 mm
Width4 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità