onsemi FDS4897C
$ 0.448
EOL
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Cronologia dell'inventario
Tendenza a 3 mesi: -24.74%
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-01-10
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2024-06-22
LTD Date2024-12-22
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
Parti correlate
Diodes Inc.DMC4029SSD-13
Dual N/P-Channel 40 V 34/55 mOhm 8.8/10.6 nC 1.8 W Silicon SMT Mosfet SOIC-8
Descrizioni
Descrizioni di onsemi FDS4897C fornite dai suoi distributori.
Trans MOSFET N/P-CH 40V 6.2A/4.4A 8-Pin SOIC T/R / MOSFET N/P-CH 40V 8-SOIC
Small Signal Field-Effect Transistor, 6.2A I(D), 40V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N & P-CH, 40V, 6.2A, SOIC-8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:6.2A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.021ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vg
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -24.74%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Specifiche tecniche
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight187 mg
Technical
Continuous Drain Current (ID)6.2 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance29 mΩ
Drain to Source Voltage (Vdss)40 V
Fall Time18 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance760 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Power Dissipation2 W
Rds On Max29 mΩ
Resistance29 MΩ
Rise Time15 ns
Schedule B8541290080
Threshold Voltage1.9 V
Turn-Off Delay Time45 ns
Dimensions
Height1.75 mm
Length5 mm
Width4 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità