onsemi FDS6690AS
$ 0.422
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
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Questo componente
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Price @ 1000
$ 0.422
$ 1.136
Stock
686,691
2,751,923
Authorized Distributors
5
2
Mount
Surface Mount
-
Case/Package
SOIC
SOIC
Drain to Source Voltage (Vdss)
30 V
-
Continuous Drain Current (ID)
10 A
10 A
Threshold Voltage
1.6 V
-
Rds On Max
12 mΩ
-
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
1 W
2.5 W
Input Capacitance
910 pF
-
Supply Chain
Lifecycle StatusObsolete (Last Updated: 1 day ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 day ago)
Parti correlate
InfineonIRF8707GTRPBF
N CH POWER MOSFET, HEXFET, 30V, 11A, SO-8; Transistor Polarity:N Channel; Contin
InfineonIRF7413ZTRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 8 Milliohms;ID 13A;SO-8;PD 2.5W;VGS +/-20V
Descrizioni
Descrizioni di onsemi FDS6690AS fornite dai suoi distributori.
N-Channel 30 V 19 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
2.5W(Ta) 20V 3V@1mA 23nC@ 10 V 1N 30V 12m¦¸@ 10A,10V 10A 910pF@15V SOIC-8 4.9mm*3.9mm*1.75mm
MOSFET, N CH, 30V, 0.01OHM, 10A, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.01ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:2.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-; SVHC:No SVHC (20-Jun-2013)
The FDS6690AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6690AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDS6690AS as the low-side switch in a synchronous rectifier is close to the performance of the FDS6690A in parallel with a Schottky diode.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight130 mg
Technical
Continuous Drain Current (ID)10 A
Current Rating10 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance12 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance910 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.6 V
Number of Channels1
Number of Elements1
Power Dissipation1 W
Rds On Max12 mΩ
Resistance12 MΩ
Rise Time5 ns
Schedule B8541290080
Threshold Voltage1.6 V
Turn-Off Delay Time25 ns
Turn-On Delay Time8 ns
Voltage Rating (DC)30 V
Dimensions
Height1.75 mm
Length5 mm
Width4 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità