onsemi FDS6673BZ
$ 0.526
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Cronologia dell'inventario
Tendenza a 3 mesi: -1.45%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FDS6673BZ.
Modelli CAD
Scarica il simbolo onsemi FDS6673BZ, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 Component Search Engine | SimboloImpronta | 3D | Scarica |
 EE Concierge | SimboloImpronta |
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.
Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 0.526
$ 0.464
Stock
3,215,426
359,966
Authorized Distributors
6
2
Mount
Surface Mount
Surface Mount
Case/Package
SOIC
SOIC
Drain to Source Voltage (Vdss)
-30 V
30 V
Continuous Drain Current (ID)
14.5 A
14.5 A
Threshold Voltage
-1.9 V
-
Rds On Max
7.8 mΩ
7.8 mΩ
Gate to Source Voltage (Vgs)
25 V
25 V
Power Dissipation
1 W
2.5 W
Input Capacitance
4.7 nF
4.7 nF
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-03-02
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
Descrizioni
Descrizioni di onsemi FDS6673BZ fornite dai suoi distributori.
P-Channel PowerTrench® MOSFET -30V, 14.5A, 7.8mΩ
P-Channel 30 V 7.8 mOhm PowerTrench Mosfet - SOIC-8
ON SEMICONDUCTOR - FDS6673BZ - MOSFET Transistor, P Channel, 14.5 mA, -30 V, 0.0065 ohm, 10 V, 1.9 V
Small Signal Field-Effect Transistor, 14.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
2.5W(Ta) 25V 3V@ 250µA 124nC@ 10 V 1individualPChannel 30V 7.8mΩ@ 14.5A,10V 14.5A 4.7nF@15V SOIC-8 SMD mount 4.9mm*3.9mm*1.75mm
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance.This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
MOSFET, P CH, 30V, 14.5A, 8SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-14.5A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):6.5mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.9V; Power Dissipation Pd:1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -1.45%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight130 mg
Technical
Continuous Drain Current (ID)14.5 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance7.8 mΩ
Drain to Source Voltage (Vdss)-30 V
Element ConfigurationSingle
Fall Time105 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance4.7 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.9 V
Number of Channels1
Number of Elements1
Power Dissipation1 W
Rds On Max7.8 mΩ
Resistance7.8 MΩ
Rise Time16 ns
Schedule B8541290080
Threshold Voltage-1.9 V
Turn-Off Delay Time225 ns
Turn-On Delay Time14 ns
Dimensions
Height1.75 mm
Length5 mm
Width4 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FDS6673BZ.
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità