onsemi FDS3572
$ 0.732
Production
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Distributori di stock non autorizzati
Rivenditori non autorizzati
Cronologia dell'inventario
Tendenza a 3 mesi: -14.13%
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Questo componente
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Price @ 1000
$ 0.732
$ 2.565
Stock
355,409
111,636
Authorized Distributors
6
2
Mount
Surface Mount
-
Case/Package
SOIC
SOIC N
Drain to Source Voltage (Vdss)
80 V
80 V
Continuous Drain Current (ID)
8.9 A
8.9 A
Threshold Voltage
4 V
-
Rds On Max
16 mΩ
-
Gate to Source Voltage (Vgs)
20 V
-
Power Dissipation
2.5 W
-
Input Capacitance
1.99 nF
-
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-02-19
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
InfineonIRF7493PBF
MOSFET, Power;N-Ch;VDSS 80V;RDS(ON) 11.5 Milliohms;ID 9.3A;SO-8;PD 2.5W;VGS +/-2
InfineonIRF7488PBF
MOSFET, Power;N-Ch;VDSS 80V;RDS(ON) 24 Milliohms;ID 6.3A;SO-8;PD 2.5W;VGS +/-20V
InfineonIRF7495PBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 18Milliohms;ID 7.3A;SO-8;PD 2.5W;VGS +/-20
Descrizioni
Descrizioni di onsemi FDS3572 fornite dai suoi distributori.
N-Channel 80 V 16 mOhm 2.5 W Surface Mount PowerTrench MosFet - SOIC-8
N-Channel PowerTrench® MOSFET 80V, 8.9A, 16mΩ
ON SEMICONDUCTOR - FDS3572 - N CHANNEL MOSFET, 80V, 8.9A, SOIC
MOSFET,N CH,80V,8.9A,8SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:8.9A; Drain Source Voltage Vds:80V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:8.9A; Power Dissipation Pd:2.5W; Voltage Vgs Max:20V
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -14.13%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight130 mg
Technical
Continuous Drain Current (ID)8.9 A
Current Rating8.9 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance16 mΩ
Drain to Source Voltage (Vdss)80 V
Element ConfigurationSingle
Fall Time13 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.99 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rds On Max16 mΩ
Resistance16 MΩ
Rise Time14 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time31 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)80 V
Dimensions
Height1.75 mm
Length5 mm
Width4 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità