onsemi FDP047N08
$ 1.653
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Cronologia dell'inventario
Tendenza a 3 mesi: -69.18%
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2008-04-09
Lifecycle StatusProduction (Last Updated: 4 days ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 4 days ago)
Parti correlate
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N-channel 75 V, 3.5 mOhm typ., 120 A STripFET(TM) Power MOSFET in TO-220 package
InfineonIPP034N08N5AKSA1
N-Channel 80 V 120 A 167 W 3.4 mOhm Through Hole Mosfet - PG-TO220-3
Descrizioni
Descrizioni di onsemi FDP047N08 fornite dai suoi distributori.
Trans MOSFET N-CH 75V 164A 3-Pin(3+Tab) TO-220 Tube / MOSFET N-CH 75V 164A TO-220
N-Channel PowerTrench® MOSFET 75V, 164A, 4.7mΩ
Dual N-Ch MOSFET 75V 164A 4.7mΩ@80A,10V 9.415nF@25V 268W(Tc) 20V 4.5V@250uA 152nC@10V TO-220-3 TH 10.67mm × 4.7mm × 16.3mm
Power Field-Effect Transistor, 164A I(D), 75V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
MOSFET, N CH, 75V, 164A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:164A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0037ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; No. of Pins:3 ;RoHS Compliant: Yes
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -69.18%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
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Specifiche tecniche
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)164 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance4.7 mΩ
Drain to Source Voltage (Vds)75 V
Element ConfigurationSingle
Fall Time114 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance9.415 nF
Max Operating Temperature175 °C
Max Power Dissipation268 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Nominal Vgs3.5 V
Number of Elements1
Power Dissipation268 W
Rds On Max4.7 mΩ
Resistance4.7 MΩ
Rise Time147 ns
Turn-Off Delay Time220 ns
Turn-On Delay Time100 ns
Dimensions
Height16.51 mm
Length10.67 mm
Width4.83 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
Dichiarazioni di conformità