onsemi FDN335N
$ 0.177
Production
Prezzo e stock
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Rivenditori non autorizzati
Cronologia dell'inventario
Tendenza a 3 mesi: -10.80%
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Price @ 1000
$ 0.177
$ 0.175
Stock
3,959,713
397,016
Authorized Distributors
6
2
Mount
Surface Mount
Surface Mount
Case/Package
SOT-23
SOT-23-3
Drain to Source Voltage (Vdss)
20 V
20 V
Continuous Drain Current (ID)
1.7 A
1.7 A
Threshold Voltage
900 mV
-
Rds On Max
70 mΩ
110 mΩ
Gate to Source Voltage (Vgs)
8 V
8 V
Power Dissipation
500 mW
460 mW
Input Capacitance
310 pF
240 pF
Supply Chain
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
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Diodes Inc.DMG2305UX-7
P-Channel 20 V 52 mOhm Surface Mount Enhancement Mode Mosfet - SOT-23-3
Diodes Inc.DMG2305UX-13
P-Channel 20 V 65 Ohms Surface Mount Enhancement Mode Mosfet - SOT-23-3
Descrizioni
Descrizioni di onsemi FDN335N fornite dai suoi distributori.
N-Channel PowerTrench™ MOSFET, 2.5V Specified, 20V, 1.7A, 70mΩ
N-Channel 20 V 0.07 Ohm 2.5 V Specified PowerTrench Mosfet SSOT-3
ON SEMICONDUCTOR - FDN335N - Power MOSFET, N Channel, 20 V, 1.7 A, 0.055 ohm, SOT-23, Surface Mount
N-CHANNEL 2.5V SPECIFIED POWERTRENCH MOSFET Small Signal Field-Effect Transistor, 1.7A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N, 20V, 1.7A, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.7A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.07ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 900mV; Powe
This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -10.80%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)1.7 A
Current17 A
Current Rating1.7 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance70 mΩ
Drain to Source Voltage (Vdss)20 V
Dual Supply Voltage25 V
Element ConfigurationSingle
Fall Time8.5 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance310 pF
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Manufacturer Package IdentifierCASE 527AG-01
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs800 mV
Number of Elements1
PackagingCut Tape
Power Dissipation500 mW
Rds On Max70 mΩ
Resistance70 MΩ
Rise Time8.5 ns
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage900 mV
Turn-Off Delay Time11 ns
Turn-On Delay Time5 ns
Voltage20 V
Voltage Rating (DC)20 V
Dimensions
Height940 µm
Length2.92 mm
Width3.05 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità