onsemi FDN304P
$ 0.196
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Cronologia dell'inventario
Tendenza a 3 mesi: -2.44%
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Supply Chain
Country of OriginMalaysia, Philippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date2000-07-06
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
InfineonBSS806NEH6327XTSA1
Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.057ohm; 0.5W; -55+150 deg.C; SMD; SOT23; AEC-Q100
VishaySI2323DDS-T1-GE3
Power MOSFET, P Channel, 20 V, 5.3 A, 0.039 ohm, SOT-23, Surface Mount
Diodes Inc.DMG2305UX-7
P-Channel 20 V 52 mOhm Surface Mount Enhancement Mode Mosfet - SOT-23-3
VishaySI2302DDS-T1-GE3
VISHAY SI2302DDS-T1-GE3 MOSFET Transistor, N Channel, 2.6 A, 20 V, 0.045 ohm, 4.5 V
Descrizioni
Descrizioni di onsemi FDN304P fornite dai suoi distributori.
P-Channel PowerTrench® MOSFET, 1.8V Specified, -20V, -2.4A, 52mΩ
This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:2.4A; On Resistance, Rds(on):0.052ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:SuperSOT-3 ;RoHS Compliant: Yes
MOSFET, P SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:2.4A; Drain Source Voltage Vds:20V; On Resistance Rds(on):52mohm; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Temperature:25°C; Full Power Rating Temperature:25°C; Package / Case:SOT-23 (TO-236); Power Dissipation Pd:500mW; Power Dissipation Pd:500mW; Pulse Current Idm:10A; SMD Marking:304P; Termination Type:SMD; Voltage Vds:20V; Voltage Vgs th Max:-1.5V
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -2.44%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
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Specifiche tecniche
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight30 mg
Technical
Continuous Drain Current (ID)2.4 A
Current Rating-2.4 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance52 mΩ
Drain to Source Voltage (Vdss)-20 V
Dual Supply Voltage-20 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance1.312 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs-800 mV
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation460 mW
Rds On Max52 mΩ
Resistance52 MΩ
Rise Time15 ns
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage-800 mV
Turn-Off Delay Time40 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)-20 V
Dimensions
Height1.12 mm
Length2.92 mm
Width3.05 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità