onsemi FDMS86104
$ 1.179
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Cronologia dell'inventario
Tendenza a 3 mesi: -37.90%
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Schede tecniche e documenti
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Modelli CAD
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2010-08-10
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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N-channel 100 V, 0.115 Ohm typ., 13 A low gate charge STripFET II Power MOSFET in DPAK package
Descrizioni
Descrizioni di onsemi FDMS86104 fornite dai suoi distributori.
N-Channel Shielded Gate PowerTrench® MOSFET 100V, 16A, 24mΩ
N-Channel 100 V 16 A 24 mOhm Surface Mount PowerTrench® Mosfet - Power56
Power Field-Effect Transistor, 7A I(D), 100V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
MOSFET, N CH, 100V, 16A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.02ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.9V; Power Dissipation Pd:73W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -37.90%
Modelli CAD
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Specifiche tecniche
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)7 A
Current16 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance24 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time3.2 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance923 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation73 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape and Reel
Power Dissipation2.5 W
Rds On Max24 mΩ
Rise Time3.5 ns
Schedule B8541290080
Threshold Voltage2.9 V
Turn-Off Delay Time14.3 ns
Turn-On Delay Time8 ns
Voltage100 V
Dimensions
Height1.05 mm
Length5 mm
Width6 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FDMS86104.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità