onsemi FDMC86102
$ 1.19
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Cronologia dell'inventario
Tendenza a 3 mesi: -45.73%
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Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-07-07
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
STMicroelectronicsSTD15NF10T4
N-Channel 100V - 0.06Ohm - 23A - DPAK LOOhm GATE CHARGE StripFET(TM) II POWER MOSFET
VishaySI7922DN-T1-E3
Dual N-Channel 100 V 0.195 Ohms Surface Mount Power Mosfet - PowerPAK 1212-8
InfineonIRF9540NSTRLPBF
MOSFET P-CH 100V 23A D2PAK "P-Channel 100 V 23A (Tc) 3.1W (Ta), 110W (Tc) Surface Mount D2PAK"
STMicroelectronicsSTD25NF10T4
N-Channel 100V - 0.033 Ohm - 25A - DPAK LOW GATE CHARGE StripFET(TM) POWER MOSFET
Descrizioni
Descrizioni di onsemi FDMC86102 fornite dai suoi distributori.
N-Channel Shielded Gate Power Trench® MOSFET 100V, 20A, 24mΩ
Trans MOSFET N-CH Si 100V 7A 8-Pin Power 33 T/R / MOSFET N-CH 100V 7A POWER33
Power Field-Effect Transistor, 7A I(D), 100V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
2.3W(Ta)，41W(Tc) 20V 4V@ 250µA 18nC@ 10 V 1individualNChannel 100V 24mΩ@ 7A,10V 7A，20A 965pF@50V SMD mount 1.1mm(height)
MOSFET, N CH, 100V, 20A, POWER33; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0194ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.1V; Power Dissipation Pd:41W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:Power 33; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -45.73%
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Specifiche tecniche
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight32.13 mg
Technical
Continuous Drain Current (ID)7 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance24 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance965 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation41 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs3.1 V
Number of Channels1
Number of Elements1
Power Dissipation2.3 W
Rds On Max24 mΩ
Resistance24 MΩ
Rise Time4 ns
Schedule B8541290080
Threshold Voltage3.1 V
Turn-Off Delay Time14 ns
Turn-On Delay Time8 ns
Dimensions
Height1.15 mm
Length3.4 mm
Width3.4 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità