onsemi FDMS3604AS

Transistor MOSFET Array Dual N-CH 30V 60A/130A 8-Pin Power 56 T/R
$ 1.429
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DistributorSKUMinPkg
Rochester ElectronicsFDMS3604AS2830
12h
VericalFDMS3604AS2830197
AvnetFDMS3604AS03K
14h
Component Stockers USAFDMS3604AS3949
>1wk
Win SourceWS-FDMS3604AS600035
13h

Schede tecniche e documenti

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IHS

Datasheet0 pagine0 anni fa

element14 APAC

Farnell

Fairchild Semiconductor

Newark

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Lifecycle StatusProduction (Last Updated: 2 months ago)

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Descrizioni

Descrizioni di onsemi FDMS3604AS fornite dai suoi distributori.

Transistor MOSFET Array Dual N-CH 30V 60A/130A 8-Pin Power 56 T/R
EBV Elektronik
DUAL N CH MOSFET, POWERTRENCH POWER STAGE, 303V, 40A, POWER56 - More Details
Fly-Wing Technology
DUAL N CH MOSFET, POWERTRENCH POWER STAGE, 303V, 40A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:23A; Drain Source Voltage Vds, N Channel:30V; On Resistance Rds(on), N Channel:0.002ohm
Newark
This device includes two specialized N-Channel MOSFETs in a dual-PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been designed to provide optimal power efficiency.
Fairchild Semiconductor
MOSFET, NN CH, ASYMMETRIC, 30V, POWER56; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0058ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:2.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Farnell

Immagini

Farnell
Rochester Electronics

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