onsemi FDMS3606AS

Asymmetric Dual N-Channel MOSFET, PowerTrench® Power Stage, 30V
$ 1.1
Obsolete
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Datasheet15 pagine4 anni fa
Datasheet0 pagine0 anni fa

Future Electronics

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onsemi

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Supply Chain

Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2011-04-01
Lifecycle StatusObsolete (Last Updated: 5 days ago)
LTB Date2020-11-13
LTD Date2021-05-13
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 days ago)

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onsemiFDMS3660S
Transistor MOSFET Array Dual N-CH 30V 60A/145A 8-Pin Power 56 T/R
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Single N-Channel 30 V 8.7 mOhm 12 nC HEXFET® Power Mosfet - PQFN-5 x 6 mm
onsemiFDMS7698
N-Channle 30 V 22 A 10 mohm Surface Mount PowerTrench Mosfet - Power 56

Descrizioni

Descrizioni di onsemi FDMS3606AS fornite dai suoi distributori.

Asymmetric Dual N-Channel MOSFET, PowerTrench® Power Stage, 30V
Transistor MOSFET Array Dual N-CH 30V 60A/148A 8-Pin Power 56 T/R
Avnet Japan
Trans MOSFET N-CH 30V 13A/27A 8-Pin Power 56 T/R - Tape and Reel
MOSFET, NN CH, ASYMMETRIC, 30V, POWER56; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0058ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:2.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been designed to provide optimal power efficiency.

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