onsemi FDMC8884
$ 0.358
Obsolete
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Supply Chain
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-06-17
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-01-10
LTD Date2018-07-10
Descrizioni
Descrizioni di onsemi FDMC8884 fornite dai suoi distributori.
N-Channel 30 V 19 mOhm Surface Mount Power Trench Mosfet - Power 33
MOSFET, N CH, 30V, 15A, MLP 3.3X3.3; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:18W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MLP; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Mosfet, N Channel, 30V, 15A, Mlp 3.3X3.3; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:15A; Tensión Drenaje-Fuente Vds:30V; Resistencia De Activación Rds(On):0.016Ohm; Tensión Vgs De Medición Rds(On):10V |Onsemi FDMC8884.
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
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Specifiche tecniche
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight200 mg
Technical
Continuous Drain Current (ID)9 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance19 mΩ
Drain to Source Voltage (Vds)30 V
Element ConfigurationSingle
Fall Time2 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance685 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation18 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.9 V
Number of Channels1
Number of Elements1
Power Dissipation2.3 W
Rds On Max19 mΩ
Resistance19 MΩ
Rise Time2 ns
Threshold Voltage1.9 V
Turn-Off Delay Time15 ns
Turn-On Delay Time6 ns
Dimensions
Height800 µm
Length3.3 mm
Width3.3 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
Dichiarazioni di conformità