onsemi FDMA8878
$ 0.702
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Cronologia dell'inventario
Tendenza a 3 mesi: +13.70%
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Supply Chain
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2012-05-07
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
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Single N-Channel 30 V 12.4 mOhm 5.4 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
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30V Dual N-Channel HEXFET Power MOSFET in a PQFN 3.3mm x3.3mm Lead Free package
Descrizioni
Descrizioni di onsemi FDMA8878 fornite dai suoi distributori.
MOSFET, N-CH, 30V, 6MLP; Transistor Polarity:N Channel; Continuous Drain Current
N-Channel Power Trench® MOSFET 30V, 9.0A, 16mΩ
N-Channel 30 V 9 A 16 mOhm 2.4 W SMT Power Trench® MOSFET - MicroFET-6 (2x2)
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process that has been optimized for rDS(on), switching performance.
MOSFET, N-CH, 30V, 6MLP; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.013ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.4W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:MicroFET; No. of Pins:6; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +13.70%
Modelli CAD
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Specifiche tecniche
Physical
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight30 mg
Technical
Continuous Drain Current (ID)9 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance16 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time2 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance720 pF
Max Operating Temperature150 °C
Max Power Dissipation2.4 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Elements1
Power Dissipation2.4 W
Rds On Max16 mΩ
Rise Time2 ns
Schedule B8541290080
Threshold Voltage1.8 V
Turn-Off Delay Time14 ns
Turn-On Delay Time6 ns
Dimensions
Height725 µm
Length2 mm
Width2 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità