onsemi FDMC8882
$ 0.631
EOL
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Cronologia dell'inventario
Tendenza a 3 mesi: Restocked
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Modelli CAD
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Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2009-05-21
Lifecycle StatusEOL (Last Updated: 5 days ago)
LTB Date2026-01-01
LTD Date2026-07-01
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 5 days ago)
Descrizioni
Descrizioni di onsemi FDMC8882 fornite dai suoi distributori.
N-Channel Power Trench® MOSFET 30V, 16A, 14.3mΩ
Trans MOSFET N-CH Si 30V 10.5A 8-Pin Power 33 EP T/R
Power Field-Effect Transistor, 10.5A I(D), 30V, 0.0143ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
POWER FIELD-EFFECT TRANSISTOR, 1
MOSFET N-CH 30V 10.5A/16A 8MLP
2.3W(Ta),18W(Tc) 20V 2.5V@ 250¦ÌA 20nC@ 10V 1N 30V 14.3m¦¸@ 10.5A,10V 10.5A,16A 945pF@15V MLP-8 3.3mm*3.3mm*730¦Ìm
IC MCU 32BIT 256KB FLASH 144LQFP
Single PT4, NCH, 30/20V in MLP 3.3x3.3 8L
MOSFET, N CH, 30V, 16A, MLP 3.3X3.3; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0124ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:18W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MLP; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: Restocked
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
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Specifiche tecniche
Physical
Case/Package0124
Contact PlatingGold
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight200 mg
Technical
Continuous Drain Current (ID)10.5 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance14.3 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time2 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance945 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation18 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.9 V
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation2.3 W
Rds On Max14.3 mΩ
Resistance14.3 MΩ
Rise Time3 ns
Schedule B8541290080
Threshold Voltage1.9 V
Turn-Off Delay Time17 ns
Turn-On Delay Time7 ns
Dimensions
Height800 µm
Length3.3 mm
Width3.3 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità