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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Farnell | FDMA908PZ | 9 | 5 | Cut Tape | 7h | |||||||
| element14 APAC | FDMA908PZ | 9 | 5 | Cut Tape | 15h | |||||||
| Microchip USA | FDMA908PZ | 216 | 600 | 4d | ||||||||
| Weyland Electronics Group Pte. Ltd. | FDMA908PZ | 56.666 | 1 | Tape & Reel | 3d | |||||||
| Win Source | WS-FDMA908PZ | 136.000 | 145 | 21h |
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
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Supply Chain
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2012-07-13
Lifecycle StatusEOL (Last Updated: 1 week ago)
LTB Date2024-06-22
LTD Date2024-12-22
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 week ago)
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Descrizioni
Descrizioni di onsemi FDMA908PZ fornite dai suoi distributori.
P-Channel PowerTrench® MOSFET -12V, -12A, 12.5mΩ
P-Channel 12 V 12.5 mO 24 nC PowerTrench Mosfet - MicroFET-6EPx2
MOSFET, P-CH, -12V, -12A, MICROFET-6; Transistor Polarity:P Channel; Continuous Drain Current Id:-12A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.01ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-
This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance and zener diode protection against ESD. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Specifiche tecniche
Physical
Contact PlatingGold
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight30 mg
Technical
Continuous Drain Current (ID)12 A
Drain to Source Breakdown Voltage-12 V
Drain to Source Resistance12.5 mΩ
Drain to Source Voltage (Vdss)-12 V
Element ConfigurationSingle
Fall Time71 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance3.957 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.4 W
Min Breakdown Voltage12 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.4 W
Rds On Max12.5 mΩ
Rise Time12 ns
Schedule B8541290080
Threshold Voltage-600 mV
Turn-Off Delay Time131 ns
Turn-On Delay Time11 ns
Dimensions
Height850 µm
Length2.05 mm
Width2.05 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità