onsemi FDMA905P
$ 0.303
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Cronologia dell'inventario
Tendenza a 3 mesi: -8.00%
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Supply Chain
Lifecycle StatusProduction (Last Updated: 4 days ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 4 days ago)
Parti correlate
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MOSFET N CH 12V 11A U-DFN2020-6E / Trans MOSFET N-CH 12V 11A 6-Pin DFN EP T/R
Descrizioni
Descrizioni di onsemi FDMA905P fornite dai suoi distributori.
FDMA905P Series -12 V -10 A 16 mOhm Single P-Ch PowerTrench® MOSFET-MicroFET 2X2
P-Channel PowerTrench® MOSFET -12V, -10A, 16mΩ
This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance.The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
MOSFET, P CH, 12V, 10A, MICROFET2X2; Transistor Polarity:P Channel; Continuous Drain Current Id:-10A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.014ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-700mV; Power Dissipation Pd:2.4W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:µFET; No. of Pins:6; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -8.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
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Specifiche tecniche
Physical
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight30 mg
Technical
Continuous Drain Current (ID)1 A
Drain to Source Breakdown Voltage-12 V
Drain to Source Resistance16 mΩ
Drain to Source Voltage (Vds)-12 V
Element ConfigurationSingle
Fall Time59 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance3.405 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.4 W
Min Breakdown Voltage12 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation900 mW
Rds On Max16 mΩ
Rise Time11 ns
Schedule B8541290080
Threshold Voltage-700 mV
Turn-Off Delay Time120 ns
Turn-On Delay Time11 ns
Dimensions
Height850 µm
Length2 mm
Width2 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
Dichiarazioni di conformità