MOSFET, PP CH, 20V, 3A, MICROFET2X2; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-3A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.09ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-700mV; Power Dissipation Pd:1.4W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MicroFET; No. of Pins:6; MSL:MSL 1 - Unlimited

Farnell

This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible.The MicroFET 2x2 Thin package offers exceptional thermal performance for it's physical size and is well suited to linear mode applications.

Fairchild Semiconductor

Alias del produttore

onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:

ON Semiconductor
ONS
ONSEMICON
ON SEM
ON SEMICONDUCTO
ON SEMICONDUCTORS
ONSEMIC
ON Semicondu
OSC
ONSE
ON Semiconductor / Fairchild
ON SEMICOND
SCG
ON Semiconductor Cor
ON SEMICO
ONSM
onsemi / Fairchild
ON SEMICONDUCTOR CORP
MOT/ON SEMI
Fairchild/ONSemiconductor
ON Semiconductor Corporation
ON4
ON Semi - ON Semiconductor
ON SEMICONDUCT
ON-SEMI SCG
ON Semiconductor Inc.
onsemiconductor
On Semiconductor Ltd

Cronologia dell'inventario

Trend storico dell'inventario non disponibile

Modelli CAD

Scarica il simbolo, l'impronta e il 3D STEP

Parti alternative

0 parti disponibili

Specifiche tecniche

Physical

MountSurface Mount

Number of Pins6

Number of Terminals6

Technical

Continuous Drain Current (ID)3 A

Drain to Source Breakdown Voltage20 V

Drain to Source Resistance120 mΩ

Drain to Source Voltage (Vds)20 V

Element ConfigurationDual

Fall Time11 ns

Gate to Source Voltage (Vgs)8 V

Input Capacitance435 pF

Max Operating Temperature150 °C

Max Power Dissipation1.4 W

Min Breakdown Voltage20 V

Min Operating Temperature-55 °C

Number of Elements2

Power Dissipation1.4 W

Rds On Max120 mΩ

Rise Time11 ns

Threshold Voltage-700 mV

Turn-Off Delay Time15 ns

Turn-On Delay Time9 ns

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi FDMA1027PT.

IHS

Datasheet7 pagine17 anni fa

Farnell

Fairchild Semiconductor

Conformità

Classificazione ambientale

Radiation HardeningNo

REACH SVHCUnaffected

RoHSCompliant

Dichiarazioni di conformità

Reach Statement3 pagine13 anni fa

Materials Sheet3 pagine13 anni fa

Reach Statement8 pagine11 anni fa

Rohs Statement1 pagina13 anni fa

Rohs Statement1 pagina14 anni fa

Reach Statement2 pagine13 anni fa