Vishay SI5935CDC-T1-GE3
$ 0.241
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | SI5935CDC-T1-GE3 | 3000 | 3K | 2d | ||||||||
| DigiKey | SI5935CDC-T1-GE3CT-ND | 4062 | 1 | Cut Tape | ||||||||
| TTI | SI5935CDC-T1-GE3 | 3000 | 3K | Tape & Reel | 2d | |||||||
| TME | SI5935CDC-T1-GE3 | 0 | 1 | 19h | ||||||||
| Newark | SI5935CDC-T1-GE3 | 0 | 3K | Tape & Reel |
Cronologia dell'inventario
Tendenza a 3 mesi: -27.74%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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1 parte disponibile
Modelli CAD
Scarica il simbolo Vishay SI5935CDC-T1-GE3, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 SnapEDA | SimboloImpronta | 3D | Scarica |
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Questo componente
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Price @ 1000
$ 0.241
$ 0.241
Stock
825,192
83,969
Authorized Distributors
6
6
Mount
Surface Mount
Surface Mount
Case/Package
SMD/SMT
SMD/SMT
Drain to Source Voltage (Vdss)
20 V
20 V
Continuous Drain Current (ID)
4 A
4 A
Threshold Voltage
-1 V
-
Rds On Max
100 mΩ
100 mΩ
Gate to Source Voltage (Vgs)
8 V
8 V
Power Dissipation
1.3 W
1.3 W
Input Capacitance
455 pF
455 pF
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Descrizioni
Descrizioni di Vishay SI5935CDC-T1-GE3 fornite dai suoi distributori.
SI5935CDC-T1-GE3 DUAL P-CHANNEL MOSFET TRANSISTOR,3.8 A,20V,8-PIN 1206 CHIPFET
Dual P-Channel 20 V 100 mO 11 nC Surface Mount Mosfet - 1206-8 ChipFET
MOSFET 2P-CH 20V 4A 1206-8 / Trans MOSFET P-CH 20V 4A 8-Pin Chip FET T/R
DUAL P-CHANNEL 20 V (D-S) MOSFET Small Signal Field-Effect Transistor, 4A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, DUAL P-CH, -20V, -4A, CHIPFET; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: -4A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.083ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage
Channel Type:Dual P Channel; Drain Source Voltage Vds N Channel:-; Drain Source Voltage Vds P Channel:20V; Continuous Drain Current Id N Channel:-; Continuous Drain Current Id P Channel:4A; No. Of Pins:8Pins; Product Range:- Rohs Compliant: No |Vishay SI5935CDC-T1-GE3.
Alias del produttore
Vishay ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Vishay può anche essere conosciuto con i seguenti nomi:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Cronologia dell'inventario
Tendenza a 3 mesi: -27.74%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageSMD/SMT
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight84.99187 mg
Technical
Continuous Drain Current (ID)4 A
Drain to Source Resistance100 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationDual
Fall Time6 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance455 pF
Max Operating Temperature150 °C
Max Power Dissipation3.1 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
PackagingDigi-Reel®
Power Dissipation1.3 W
Rds On Max100 mΩ
Resistance100 MΩ
Rise Time32 ns
Schedule B8541290080
Threshold Voltage-1 V
Turn-Off Delay Time25 ns
Turn-On Delay Time10 ns
Dimensions
Height1.1 mm
Length3.1 mm
Width1.7 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità