onsemi FDFMA2P853
$ 0.38
Obsolete
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Supply Chain
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2005-08-23
Lifecycle StatusObsolete (Last Updated: 1 week ago)
LTB Date2021-02-17
LTD Date2021-08-17
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 week ago)
Parti correlate
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SI5935CDC-T1-GE3 DUAL P-CHANNEL MOSFET TRANSISTOR,3.8 A,20V,8-PIN 1206 CHIPFET
Diodes Inc.ZXMN2B01FTA
ZXMN2B01 Series 20 V 0.1 Ohm N-Channel Enhancement Mode MOSFET - SOT-23
Descrizioni
Descrizioni di onsemi FDFMA2P853 fornite dai suoi distributori.
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode -20V , -3.0A, 120mΩ
P-Channel 20 V 120 mOhm Integrated PowerTrench® MOSFET - MicroFET
Power Field-Effect Transistor, 2.2A I(D), 20V, 0.12ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-229VCCC
MOSFET, P-CH, -20V, -3A, WDFN; Transistor Polarity: P Channel; Continuous Drain Current Id: -3A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.09ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -700mV; P
This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses.The MicroFET 2x2 package offers exceptional thermal performance for it's physical size and is well suited to linear mode applications.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
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Specifiche tecniche
Physical
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight40 mg
Technical
Collector Emitter Breakdown Voltage2 V
Continuous Drain Current (ID)2.2 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance120 mΩ
Drain to Source Voltage (Vds)20 V
Element ConfigurationSingle
Fall Time11 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance435 pF
Max Operating Temperature150 °C
Max Power Dissipation1.4 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation1.4 W
Rds On Max120 mΩ
Resistance120 MΩ
Rise Time11 ns
Schedule B8541290080
Turn-Off Delay Time15 ns
Turn-On Delay Time9 ns
Dimensions
Height750 µm
Length2 mm
Width2 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
Dichiarazioni di conformità