onsemi FDG6301N-F085
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | FDG6301N_F085 | 0 | 3K | Tape & Reel | ||||||||
| Farnell | FDG6301N-F085 | 0 | 5 | Cut Tape | 4h | |||||||
| Win Source | WS-FDG6301N_F085 | 119.960 | 250 | 5h | ||||||||
| Worldway Electronics | FDG6301N_F085 | 26.425 | 7 | 9h | ||||||||
| Aztech | FDG6301N-F085 | 10.362 | 2d |
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FDG6301N-F085.
Modelli CAD
Scarica il simbolo onsemi FDG6301N-F085, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 EE Concierge | SimboloImpronta | ||
 SnapEDA | Impronta | Scarica |
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Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 0.158
Stock
653,588
1,671,564
Authorized Distributors
2
6
Mount
Surface Mount
Surface Mount
Case/Package
SC
SC
Drain to Source Voltage (Vdss)
25 V
25 V
Continuous Drain Current (ID)
220 mA
220 mA
Threshold Voltage
850 mV
850 mV
Rds On Max
4 Ω
4 Ω
Gate to Source Voltage (Vgs)
8 V
8 V
Power Dissipation
300 mW
300 mW
Input Capacitance
9.5 pF
9.5 pF
Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date2008-10-29
Lifecycle StatusObsolete (Last Updated: 6 days ago)
LTB Date2021-07-05
LTD Date2022-07-05
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 6 days ago)
Descrizioni
Descrizioni di onsemi FDG6301N-F085 fornite dai suoi distributori.
Mosfet Array 2 N-Channel (Dual) 25V 220mA 300mW Surface Mount SC-70-6
Dual N-Channel Digital FET 25 V, 0.22 A, 4 Ω
N-Channel Power Mosfet/Tape Reel |Onsemi FDG6301N_F085
MOSFET, DUAL N-CH, 25V, 0.22A, 150DEG C
Small Signal Field-Effect Transistor, 0.22A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
FDG6301N_F085 Fairchild/ON Semiconductor
MOSFET, DUAL N-CH, 25V, 0.22A, 150DEG C; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 220mA; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 2.6ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage
These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Specifiche tecniche
Physical
Case/PackageSC
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight28 mg
Technical
Continuous Drain Current (ID)220 mA
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance4 Ω
Drain to Source Voltage (Vdss)25 V
Element ConfigurationDual
Fall Time3.2 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance9.5 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
PackagingTape and Reel
Power Dissipation300 mW
Rds On Max4 Ω
Rise Time4.5 ns
Schedule B8541210080
Threshold Voltage850 mV
Turn-Off Delay Time4 ns
Turn-On Delay Time5 ns
Dimensions
Height1.1 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FDG6301N-F085.
Conformità
Classificazione ambientale
China RoHSCompliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità