onsemi FDG6301N
$ 0.153
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Cronologia dell'inventario
Tendenza a 3 mesi: +81.98%
Modelli CAD
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Modelli CAD
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-02-01
Lifecycle StatusProduction (Last Updated: 1 week ago)
LTB Date2025-04-17
LTD Date2025-10-17
Manufacturer Lifecycle StatusLIFETIME (Last Updated: 1 week ago)
Descrizioni
Descrizioni di onsemi FDG6301N fornite dai suoi distributori.
Transistor MOSFET Array Dual N-CH 25V 0.22A 6-Pin SC-70 T/R
DUAL N-CHANNEL, DIGITAL FET Small Signal Field-Effect Transistor, 0.22A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +81.98%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Specifiche tecniche
Physical
Case/PackageSC
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight28 mg
Technical
Continuous Drain Current (ID)220 mA
Current Rating220 mA
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance4 Ω
Drain to Source Voltage (Vds)25 V
Dual Supply Voltage25 V
Element ConfigurationDual
Fall Time4.5 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance9.5 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
PackagingCut Tape
Power Dissipation300 mW
Rds On Max4 Ω
Resistance4 Ω
Rise Time4.5 ns
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage850 mV
Turn-Off Delay Time4 ns
Turn-On Delay Time5 ns
Voltage Rating (DC)25 V
Dimensions
Height1.1 mm
Length2 mm
Width1.25 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
Dichiarazioni di conformità