onsemi FDG327N
$ 0.358
Obsolete
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Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-07-30
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2021-05-13
LTD Date2021-11-13
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
Parti correlate
Diodes Inc.DMN2112SN-7
Single N-Channel 20 V 0.25 Ohm 500 mW Silicon Surface Mount Mosfet - SOT-23
Descrizioni
Descrizioni di onsemi FDG327N fornite dai suoi distributori.
TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,1.5A I(D),SOT-363
N-Channel PowerTrench® MOSFET, 20V, 1.5 A, 90 mΩ
N-Channel 20 V 90 mOhm Surface Mount PowerTrench Mosfet SC70-6
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small package.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageSC
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight28 mg
Technical
Continuous Drain Current (ID)1.5 A
Current Rating1.5 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance90 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationSingle
Fall Time6.5 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance423 pF
Max Operating Temperature150 °C
Max Power Dissipation380 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs700 mV
Number of Elements1
Power Dissipation420 mW
Rds On Max90 mΩ
Resistance90 mΩ
Rise Time6.5 ns
Schedule B8541210080
Threshold Voltage700 mV
Turn-Off Delay Time14 ns
Turn-On Delay Time6 ns
Voltage Rating (DC)20 V
Dimensions
Height1 mm
Length2 mm
Width1.25 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità