onsemi FDG312P
$ 0.169
Obsolete
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Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1999-02-01
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2020-11-13
LTD Date2021-05-13
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
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Descrizioni
Descrizioni di onsemi FDG312P fornite dai suoi distributori.
P-Channel PowerTrench® MOSFET, 2.5V Specified, -1.2 A, 180 mΩ
Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Trans MOSFET P-CH 20V 1.2A 6-Pin SC-88 T/R
750mW(Ta) 8V 1.5V@ 250¦ÌA 5nC@ 4.5 V 1P 20V 180m¦¸@ 1.2A,4.5V 1.2A 330pF@10V SC-70-6,SC-88 2mm*1.25mm*1.1mm
20V P-CH. FET, 180 MO, SC70-6 <AZ
CONN MAGJACK 1PORT 1000 BASE-T
MOSFET, P; Transistor Polarity:P Channel; Continuous Drain Current Id:1.2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):187mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:900mV; Power Dissipation Pd:750mW; Transistor Case Style:SC-70; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Current Id Max:1.2A; Package / Case:SC70; Power Dissipation Pd:750mW; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:-900mV; Voltage Vgs Rds on Measurement:8V
This P-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
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Tendenza a 3 mesi: +0.00%
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Specifiche tecniche
Physical
Case/PackageSC
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight28 mg
Technical
Continuous Drain Current (ID)1.2 A
Current Rating-1.2 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance180 mΩ
Drain to Source Voltage (Vdss)-20 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance330 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation750 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation480 mW
Rds On Max180 mΩ
Resistance180 mΩ
Rise Time12 ns
Schedule B8541210080
Threshold Voltage900 mV
Turn-Off Delay Time16 ns
Turn-On Delay Time7 ns
Voltage Rating (DC)-20 V
Dimensions
Height1.1 mm
Length2 mm
Width1.25 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità